Scientific articles of Patrick Martin and co-authors in materials science and microelectronics

• Diffusion and lattice location of lithium in zinc telluride, P. Martin and A. Bontemps, Journal of Physics and Chemistry of Solids, 41, 1171-1174 (1980). {DOI}
• Self-diffusion and trapping of zinc in zinc telluride, P. Martin and A. Bontemps, Phys. Stat. Sol. (a) 58, K99-103 (1980). {DOI}
• Impurity identification and characterization by electrical, optical and nuclear methods. The ZnTe:Au case, N. Magnea, J.L. Pautrat, K. Saminadayar, B. Pajot, P. Martin, E. Ligeon and A. Bontemps, Revue de Physique Appliquée, vol. 15, N° 3, 701-706 (1980). {DOI}
  {HAL}
• Oxidation of an InSb layer after ion implantation, P. Martin, E. Ligeon and J.P. Gailliard, Nuclear Instruments and Methods, 197, 47-49 (1982) [Microanalysis Conference, Namur, Belgium (1981)]. {DOI}
• Ion implantation effects in bubble garnet materials, A. Perez, G. Marest, P. Gérard, M. Madore and P. Martin, Nuclear Instruments and Methods 209/210, 1179 (1983). [Conference Ion Beam Modification of Materials, Grenoble (1982)]. {DOI}
• Amorphous soft magnetic material formation by ion mixing, P. Gérard, G. Suran, B. Blanchard, J. Deven, M. Dupuy and P. Martin. MRS Symposium E – Ion Implantation and Ion Beam Processing of Materials, Volume 27 (1983) {DOI}
• Oxygen depth profiling in implanted garnets, P. Gérard, P. Martin and R. Danielou, Journal of Magnetism and Magnetic Materials, 35, 303-306 (1985). {DOI}
• Structural characterization of SIMOX structures, J. Margail, I. Stoemenos, C. Jaussaud, M. Dupuy, P. Martin, B. Blanchard and M. Bruel, Mater. Res. Soc. Symp. Europe, Strasbourg (France) 1985, published in Energy Beam-Solid Interactions and Transient Thermal Processing, 4, 519 (1985), edited by V. T. Nguyen and A. G. Cullis (Les Editions de Physique, 1985).
• Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditions, M. Bruel, J. Margail, J. Stoemenos, P. Martin and C. Jaussaud, Vacuum, 35(12), 589-593 (1985). {DOI}
• Some hydrogen implantation effects in bubble garnets, P. Gérard, P. Martin and M.T. Delaye, Journal of Applied Physics, 57(1), 4058-4060 (1985). {DOI}
• Application of the ¹⁶O(d,α)¹⁴N nuclear reaction to oxygen depth profiling in SIMOX structures, M. Dubus, J. Margail and P. Martin, Nuclear Instruments and Methods, B15, 559-562 (1986). [Int. conference on Ion Beam Analysis, Berlin (Germany) 1985]. {DOI}
• Some investigations of MeV ion beam enhanced adhesion, R.E. Benenson, B. Daudin, P. Martin and M. Dubus, Nuclear Instruments and Methods, B19/20, 114-119 (1987) [Int. Conference on Ion Beam Modification of Materials (IBMM-86), Catania (Italy)]. {DOI}
• MeV ion beam enhanced adhesion of Au films on alumina, B. Daudin and P. Martin, Nuclear Instruments and Methods, B34, 181-187 (1988). {DOI}
• MeV ion beam-enhanced adhesion of Au films on alumina substrates of various roughness, B. Daudin and P. Martin, Nuclear Instruments and Methods, B39, 680-683 (1989). [Int. Conference on Ion Beam Modification of Materials (IBMM-88), Tokyo (Japan)]. {DOI}
• MeV ion beam polishing of anodically grown alumina, B. Daudin and P. Martin, Journal of Materials Science and Engineering, A115, 63-66 (1989). [6^th Int. Conference on Surface Modification of Metals by Ion Beams (SM2IB), Riva Del Garda (Italy)]. {DOI}
• High temperature ion beam synthesis of cubic SiC, P. Martin, B. Daudin, M. Dupuy, A. Ermolieff, M. Olivier, A.M. Papon and G. Rolland, Journal of Applied Physics, 67 (6), 2908-2912 (1990). {DOI}
• From amorphous carbon to amorphous diamond-like carbon, B. André, J. Ph. Nabot, L. Lombard and P. Martin, Congrès NATO advanced study institutes, diamond and diamond-like science and films and coatings, Castelvecchio Pascoli (Italy) Jul. 1990, proceedings Feb. 91. Diamond and Diamond-like Films and Coatings, Volume 266 of the series NATO ASI Series pp. 313-320 (Springer). {DOI}
• In-situ monitoring of silylation mechanisms by laser interferometry, C. Pierrat, P. Paniez and P. Martin, Proceedings of SPIE, vol. 1466, 248-256 (1991) [SPIE Symposium on Microlithography, San José (USA) 3-8 march 1991, Advances in Resist Technology and Processing VIII]. {DOI}
• Electrical surface conductivity in quartz induced by ion implantation, P. Martin, M. Dufour, A. Ermolieff, S. Marthon, F. Pierre and M. Dupuy, Journal of Applied Physics, 72 (7), 2907-2911 (1992). {DOI}
• Implantation of quartz with high dose titanium ions as studied by X-ray photoelectron spectroscopy, A. Ermolieff, S. Marthon, P. Martin, F. Pierre and M. Dufour, Solid State Communications, 82 (7), 517-519 (1992). {DOI}
• PECVD silicon oxides as studied by XPS, RBS, ERDA, IRS and ESR, A. Ermolieff, T. Sindzingre, S. Marthon, P. Martin, F. Pierre and L. Peccoud, Applied Surface Science, 64, 175-183 (1992). {DOI}
• Enhancement of quartz electrical conductivity by ion implantation, J.S. Danel, P. Martin, M. Dufour, A. Ermolieff, S. Marthon, F. Pierre, M. Dupuy. Proceedings of the 47^th IEEE Int. Frequency Control Symposium, 2-4 June 1993, Salt Lake City (USA), pp. 597-602. {DOI}
• Achieving very low LF noise in depletion-mode MOSFETs, P. Martin and J.J. Yon, The Electrochemical Society Proceedings Volume 95-9 (1995) 321-327 [187^th Electrochemical Society Meeting, Reno (USA) 21-26 may 1995, Symposium on low temperature electronics and high temperature superconductivity]. Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity, Cor L. Claeys, The Electrochemical Society, 1995 – 446 pages. {Google Books}
• Charge Based MOS Transistor Mobility Modelling Applicable at Low Temperature, Fabien Théodoloz, Christian Enz and Matthias Bucher, unpublished (1999).
• IRFPA Advanced behavioural modeling dedicated to optronic systems evaluations, P. Castelein, P. Audebert and P. Martin, SPIE 15^th Annual Int. Symposium on Aerospace / Defense Sensing, Simulation and Controls, 16-20 April 2001, Orlando, Florida (USA). {DOI}
• MOSFET Modeling and Parameter Extraction for Low Temperature Analog Circuit Design, P. Martin, M. Bucher and C. Enz, Proceedings of the 5^th European Workshop on Low Temperature Electronics (WOLTE-5), June 19-21, 2002 Grenoble, France. Journal de Physique IV, vol. 12, Pr3, 51-56 (2002).
• MOSFET Modeling for Low Temperature (77 K – 200 K) Analog Circuit Design, P. Martin and M. Bucher, Proceedings of the 10^th Int. conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2003, Lodz (Poland), 26-28 June 2003, pp. 89-92.
• MOSFET 1/f Noise Modeling, Jan A. Chroboczek and Patrick Martin, Proceedings of the 10^th Int. conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2003, Lodz (Poland), 26-28 June 2003, pp. 77-78.
• Comparison of 0.35 and 0.21 µm CMOS Technologies for Low Temperature Operation (77 K – 200 K) and Analog Circuit Design, Patrick Martin and Matthias Bucher, Proceedings of the 6^th European Workshop on Low Temperature, WOLTE-6, 23-25 June 2004, ESTEC, Noordwijk (The Netherlands), WPP-227, pp. 133-136.
• Compact Modeling of the Self Heating Effect in 120 nm Multifinger Body-Contacted SOI MOSFET for RF Circuits, M. Reyboz, R. Daviot, O. Rozeau, P. Martin, M. Paccaud, Proceedings of the IEEE SOI Conference 2004, October 4-7, Charleston, SC, USA, pp. 159-161. {DOI}
• MOSFET Modeling for Low Temperature Analog Circuit Design, P. Martin, EKV 2.6 Users’ Meeting, Nov. 4^th, 2004, EPFL, Lausanne (Switzerland).
• Wafer-Level Extraction of BSIMSOI Low Frequency Noise Parameters for 130 nm Partially-Depleted SOI MOSFETs, Patrick Martin, Mickaël Boasis, Olivier Rozeau, Jérôme Prouvée and David Axelrad, MOS-AK Workshop, Strasbourg (France), April 8, 2005.
• A Multi-phase 10 GHz VCO in CMOS/SOI for 40 Gbits/s SONET OC-768 Clock and Data Recovery Circuits, D. Axelrad, E. de Foucauld, M. Boasis, P. Martin, P. Vincent, M. Belleville and F. Gaffiot, IEEE RFIC 2005 Symposium, 12-14 June, 2005, Long Beach, CA, USA, pp. 573-576. {DOI}
• Asymmetrical Double Gate (DG) MOSFET Compact Modeling, M. Reyboz, O. Rozeau, T. Poiroux and P. Martin, MOS Modeling and Parameter Extraction Group, MOS-AK Workshop, Grenoble, September 16, 2005.
• Explicit Analytical Charge-Based Model of Asymmetrical Double Gate MOSFET, M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, G. Lecarval and J. Jomaah, 2005 IEEE Int. Conference on Electron Devices and Solid-State Circuits (EDSSC), December 19-21, 2005, Hong Kong, pp. 257-260. {DOI}
• Explicit Compact Model of Independent Double Gate MOSFET, M Reyboz, O. Rozeau, T. Poiroux, P. Martin and J. Jomaah, Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EuroSOI 2006 Workshop), Grenoble, France, 8-10 March, 2006.
• Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET, M. Reyboz, T. Poiroux, O. Rozeau, P. Martin and J. Jomaah, Workshop on Compact Modeling (WCM06), 2006 NSTI Nanotechnology Conference and Trade Show, May 7-11, 2006, Boston, Massachusetts, USA.
• An explicit analytical charge-based model of undoped independent double gate MOSFET, Marina Reyboz, Olivier Rozeau, Thierry Poiroux, Patrick Martin and Jalal Jomaah, Solid State Electronics 50 (2006) 1276-1282. {DOI}
• Fabrication of high performance low temperature poly-silicon backplanes on metal foil for flexible active-matrix organic light emission diode displays, François Templier, Bernard Aventurier, Patrick Demars, Jean-Louis Botrel and Patrick Martin, E-MRS 2006 Spring Meeting, Symposium I: Thin Films for Large Area Electronics, Nice (France) May 29-June 2, 2006. Thin Solid Films, Vol. 515, Issue 19, July 2007, pp. 7428-7432. {DOI}
• Explicit Threshold Voltage Based Compact Model Of Independent Double Gate (IDG) MOSFET Including Short Channel Effects, M. Reyboz, O. Rozeau, T. Poiroux, P. Martin and J. Jomaah, MOS-AK Workshop, Montreux (Switzerland), September 22, 2006. {PPT}
• Modélisation statistique de l’erreur d’appariement dans la technologie « TFT poly-Si » pour la conception de circuits analogiques, Cédric Rechatin, Patrick Audebert, Patrick Martin, 7^e colloque sur le Traitement Analogique de l’Information, du Signal et ses Applications (TAISA’2006), 19-20 octobre 2006, Strasbourg (France).
• Explicit 2D Compact Model of Independent Double Gate MOSFET, Marina Reyboz, Olivier Rozeau, Thierry Poiroux, Patrick Martin, Mickaël Cavelier and Jalal Jomaah, 4^th Int. Workshop on Compact Modeling (IWCM 07), January 23, 2007, Yokohama (Japan).
• Sigma-delta column-wise A/D conversion for cooled ROIC, F. Guellec, P. Villard, F. Rothan, L. Alacoque, C. Chancel, P. Martin, P. Castelein, S. Dugalleix and P. Costa, SPIE Defense & Security symposium, 9-13 April 2007, Orlando (USA). {DOI}
• Explicit Short Channel Compact Model of Independent Double Gate MOSFET, M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah, WCM07, NSTI Nanotechnology Conference and Trade Show, May 20-24, 2007, Santa Clara, California, (USA). ISBN 1420061844, vol. 3, pp. 578-581.
• Low-Frequency Noise in 25 nm Independent Double Gate MOSFETs, P. Martin, B. Ripoche, M. Reyboz, T. Poiroux, M. Vinet and O. Rozeau, 19^th Int. Conference on Noise and Fluctuations, September 9-14, 2007, Tokyo (Japan). AIP Conference Proceedings, July 13, 2007, Volume 922, pp. 47-50. {DOI}
• MOSFET Compact Modeling Issues for Low Temperature (77 K – 200 K) Operation, P. Martin, M. Cavelier, R. Fascio and G. Ghibaudo, WCM08, NSTI Nanotechnology Conference and Trade Show, June 1-5, 2008, Boston, MA (USA). ISBN 978-1-4200-8505-1, vol. 3, pp. 865-868.
• Improved Carrier Mobility in Compact Model of Independent Double Gate MOSFET, M. Reyboz, P. Martin, O. Rozeau and T. Poiroux, WCM08, NSTI Nanotechnology Conference and Trade Show, June 1-5, 2008, Boston, MA (USA). ISBN 978-1-4200-8505-1, vol. 3, pp. 881-884.
• EKV3 Compact Modeling of MOS transistors from a 0.18 µm CMOS Technology for Mixed Analog-Digital Circuit Design at Low Temperature, P. Martin, M. Cavelier, R. Fascio, G. Ghibaudo and M. Bucher, 8^th Int. Workshop on Low Temperature Electronics (WOLTE-8), June 22-25, 2008, Jena/Gabelbach (Germany). Extended abstracts pp. 38-39.
• Evaluation of the EKV3 Compact Model for Low Temperature Analog Circuit Simulation, P. Martin, R. Fascio, G. Ghibaudo and M. Bucher, MOS-AK workshop on compact modeling, september 19th, 2008, Edinburgh (UK).
• EKV3 Compact Modeling of MOS transistors from a 0.18 µm CMOS Technology for Mixed Analog-Digital Circuit Design at Low Temperature, P. Martin, M. Cavelier, R. Fascio, G. Ghibaudo and M. Bucher, Cryogenics, vol. 49, n° 11, pp. 595-598, 2009 . {DOI}
• Low-Frequency Noise Modeling at Low Temperature with the EKV3 Compact Model, P. Martin, G. Ghibaudo and M. Bucher, MOS-AK workshop on compact modeling, April 2-3, 2009, Frankfurt/Oder (Germany).
• 1/f Noise Modeling at Low Temperature with the EKV3 Compact Model, P. Martin and G. Ghibaudo, NSTI Nanotechnology Conference and Trade Show, WCM 2009, May 5-7, 2009, Houston (USA). Proceedings ISBN 978-1-4398-1784-1, vol. 3, pp. 636-638.
• Low-Frequency Noise in a 0.18 µm Mixed-Mode CMOS Technology at Low Temperature, P. Martin, M. Cavelier and G. Ghibaudo, 20^th Int. Conference on Noise and Fluctuations, ICNF 2009, June 14-19, 2009, Pisa (Italy). AIP Conference Proceedings 1129, Editors Massimo Macucci, Giovanni Basso, pp. 317-320, 2009. {DOI}
• Continuous Model for Independent Double Gate MOSFET, M. Reyboz, P. Martin, T. Poiroux and O. Rozeau, Solid State Electronics, 53 (5) pp. 504-513, (2009). {DOI}
• MOSFET Modeling for Design of Mixed Analog/Digital Circuits at Cryogenic Temperature, Patrick Martin, MOS-AK workshop on compact modeling, April 8-9, 2010, Rome (Italy).
• MOS Transistor Matching at Low Temperature for Analog Circuit Design, P. Martin, A.S. Royet and G. Ghibaudo, 9^th Int. Workshop on Low Temperature Electronics (WOLTE-9), June 21-23, 2010, Guarujá, SP (Brazil).
• Several Issues for Analog Design with a 0.18 µm CMOS Technology at Low Temperature, P. Martin, A.S. Royet, M. Cavelier, R. Fascio and G. Ghibaudo, 9^th Int. Workshop on Low Temperature Electronics (WOLTE-9), June 21-23, 2010, Guarujá, SP (Brazil).
• Extraction of Low Frequency Noise and Transistor Mismatch Parameters at Cryogenic Temperature for Design of CMOS Imagers in a 0.18 µm Mixed Analog-Digital Process, Anne-Sophie Royet, Patrick Martin and Fabrice Guellec, MOS-AK workshop, Seville (Spain) 17/09/2010.
• MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 µm CMOS process, P. Martin, A.-S. Royet, F. Guellec and G. Ghibaudo, Solid-State Electronics 62 (2011), 115-122. {DOI}
• MOSFET Modeling for Simulation, Design and Optimization of Infrared CMOS Image Sensors Working at Cryogenic Temperature (cryo-CMOS), Patrick Martin and Fabrice Guellec, Proceedings of the 18^th Int. Conference Mixed Design of Integrated Circuits and Systems (MIXDES), 16-18 June 2011, Gliwice (Poland), pp. 103-106. {DOI}
• HSP: A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors, Patrick Martin and Rereao Hahe, 10^th MOS-AK/GSA ESSDERC/ESSCIRC Workshop, September 21, 2012, Bordeaux (France).
• A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors (Leti-HSP model), P. Martin, R. Hahe and L. Lucci, Nanotech Conference, May 12-16, 2013, Washington DC, USA. Technical Proceedings of the 2013 NSTI-Nanotechnology Conference and Trade Show (Nanotech 2013), vol. 2, pp. 544-547.
• A Compact Model of AlGaN/GaN HEMTs Power Transistors Based on a Surface-Potential Approach (Leti-HSP model), P. Martin and L. Lucci, 20^th Int. Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Gdynia, Poland, June 20-22, 2013. Conference proceedings pp. 92-95. {DOI}
• Development of Verilog-A models for silicon photonics devices and implementation in a standard EDA environment, Patrick Martin, Fabien Gays, Edouard Grellier and Sylvie Menezo, MOS-AK Workshop, London (UK), 2014.
• Modeling of Silicon Photonics Devices with Verilog-A, P. Martin, F. Gays, E. Grellier, A. Myko and S. Menezo, Proceedings of the 29^th Int. Conference on Microelectronics (MIEL 2014), pp. 209-212, Belgrade, Serbia, 12-15 May 2014. {DOI}
  [Cited in a review article « Silicon Photonics Circuit Design: Methods, Tools and Challenges », Wim Bogaerts and Lukas Chrostowski, Laser & Photonics Reviews, Volume 12, Issue 4 (2018).]
• Compact Modeling of Silicon Photonics Devices and Their Integration in Standard EDA Tools, P. Martin, F. Gays, Leti 2014 annual research report, p. 55.
• Welcome from the local co-organizing committee, Patrick Martin, MOS-AK Workshop, fringe meeting of DATE 2015 conference, Grenoble, March 12, 2015.
• Some examples of SPICE compact modeling for design of advanced analog integrated circuits in CEA-Leti, P. Martin, CEFIPRA/IFCPAR Indo-French seminar on New Trends in Electron Device Modeling, Indian Institute of Science, Bangalore, March 30 – April 1, 2015.
• The Leti-HSP Surface-Potential-Based SPICE Model for AlGaN/GaN Power Devices, P. Martin and L. Lucci, Compound Semiconductor Week (CSW 2015), Santa Barbara (CA, USA), 28 June – 2 July 2015, abstract pp. 308-309.
• RF Modeling of Advanced Devices from State-of-the-Art FDSOI, to GaN Based III-V HEMTs, L. Lucci, P. Martin, M. Pala, Leti 2015 annual research report, p. 42.
• The Leti-HSP Compact Model and PDK for Simulation and Design of Power Circuits including GaN HEMTs, Patrick Martin, Luca Lucci and Marjorie Gary, unpublished (2017).
• Retired in 2017 from scientific research, currently conducting historical research in South Burgundy, Beaujolais, Dauphiné and other places in France. List of historical publications and communications (in french).